• Part: AGR21030EF
  • Description: Transistor
  • Category: Transistor
  • Manufacturer: TriQuint Semiconductor
  • Size: 378.77 KB
Download AGR21030EF Datasheet PDF
TriQuint Semiconductor
AGR21030EF
Features Typical performance for 2 carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1 - 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1 - 10 MHz and F2 + 10 MHz. Typical P/A ratio of 8.5 d B at 0.01% (probability) CCDF: .. - Output power: 7 W. - Power gain: 14.5 d B. - Efficiency: 26%. - IM3: - 34 d Bc. - ACPR: - 37 d Bc. - Return loss: - 12 d B. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 2140 MHz, 30 W continuous wave (CW) output power. Large signal impedance parameters available. - Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at...