AGR21030EF Overview
Description
The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications. Power - 10 (VDS = 31 V) Operating Junction TemperaTJ 200 ture Storage Temperature Range TSTG –65, 150 Unit Vdc Vdc W W/°C W °C °C Figure 1.
Key Features
- Output power: 7 W
- Power gain: 14.5 dB
- Efficiency: 26%
- IM3: –34 dBc
- ACPR: –37 dBc
